Small signal model and efficient parameter extraction technique for deep submicron MOSFETs for RF applications

Journal article

T. C NG, T. N Swe, K. S Yeo, K. W Chew, J. G MA and M. A DO

IEE proceedings. Circuits, devices, and systems, Vol.148(1), pp.35-39

01/02/2001

Abstract

Applied sciences

Electronics

Exact sciences and technology

Field effect devices

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Transistors

1 Record Views

Title: Small signal model and efficient parameter extraction technique for deep submicron MOSFETs for RF applications
Creators - without role: T. C NG - Nanyang Technological University
T. N Swe - Nanyang Technological University
K. S Yeo - Nanyang Technological University
K. W Chew - Nanyang Technological University
J. G MA - Nanyang Technological University
M. A DO - Nanyang Technological University
Publication Details: IEE proceedings. Circuits, devices, and systems, Vol.148(1), pp.35-39
Publisher: Institution of Electrical Engineers
Number of pages: 5
Identifiers: 9912502409846
Academic Unit: Office of Provost
Language: English
Resource Type: Journal article