Study of dopant redistribution at the substrate-source/drain p-n junction of nanoscale MOSFET during progressive breakdown

Journal article

Peer reviewed

Vui-Lip LO, Kin-Leong Pey, Wai-Tat Lim, Diing-Shenp Ang and Chih-Hang Tung

IEEE transactions on electron devices, Vol.53(11), pp.2786-2791

01/11/2006

Abstract

Applied sciences

Compound structure devices

Diodes

Electronics

Exact sciences and technology

Molecular electronics, nanoelectronics

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Transistors

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Title: Study of dopant redistribution at the substrate-source/drain p-n junction of nanoscale MOSFET during progressive breakdown
Creators - without role: Vui-Lip LO - Nanyang Technological University
Kin-Leong Pey - Nanyang Technological University
Wai-Tat Lim - Nanyang Technological University
Diing-Shenp Ang - Nanyang Technological University
Chih-Hang Tung - Institute of Microelectronics, Singapore 117685, Singapore
Publication Details: IEEE transactions on electron devices, Vol.53(11), pp.2786-2791
Publisher: Institute of Electrical and Electronics Engineers
Number of pages: 6
Identifiers: 9914321209846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Journal article