Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique

Journal article

Peer reviewed

W. S Lau, T. C Chong, L. S Tan, C. H Goo and K. S Goh

Applied physics letters, Vol.61(1), pp.49-51

06/07/1992

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electron states

Exact sciences and technology

Impurity and defect levels

Physics

1 Record Views

Title: Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique
Creators - without role: W. S Lau - National University of Singapore
T. C Chong - Duke-NUS Medical School
L. S Tan - National University of Singapore
C. H Goo - National University of Singapore
K. S Goh - National univ. Singapore, cent. optoelectronics, dep. electrical eng., Singapor 0511, Singapore
Publication Details: Applied physics letters, Vol.61(1), pp.49-51
Publisher: American Institute of Physics
Number of pages: 3
Identifiers: 9911285809846
Academic Unit: Temasek Lab
Language: English
Resource Type: Journal article