Abstract
A diffraction-limited three-dimensional (3D) direct laser writing (DLW) system based on two-photon polymerization can routinely pattern structures at the 100 nm length scale. Several schemes have been developed to improve the patterning resolution of 3D DLW but often require customized resist formulations or multi-wavelength exposures. Here, we introduce a scheme to produce suspended nano-webs with feature sizes below 10 nm in IP-Dip resist using sub-threshold exposure conditions in a commercial DLW system. The narrowest suspended lines (nano-webs) measured 7 nm in width. Larger ∼20 nm nano-webs were patterned with ∼80% yield at increased laser powers. In addition, closely spaced nano-gaps with a center-to-center distance of 33 nm were produced by patterning vertically displaced suspended lines followed by metal deposition and liftoff. We provide hypotheses and present preliminary results for a mechanism involving the initiation of a percolative path and a strain-induced narrowing in the nano-web formation. Our approach allows selective features to be patterned with dimensions comparable to the sub-10 nm patterning capability of electron-beam lithography (EBL).