Abstract
Superlatticelike (SLL) dielectric comprising of
Ge
2
Sb
2
Te
5
and
SiO
2
was employed to reduce the power and increase the speed of phase-change random access memories (PCRAMs). In this study, we found that PCRAM cells with SLL dielectric require lower currents and shorter pulse-widths to switch compared to the cells with
SiO
2
dielectric. As the thickness of the SLL period reduces, the power and speed of the cells improved further due to the better thermal confinement of the SLL dielectric. Fast phase-change in 5 ns was observed in large cells of
1
μ
m
, showing the effectiveness of SLL dielectric for advanced memory applications.