The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2 /HfO2

Journal article

Peer reviewed

H. P YU, K. L Pey, W. K Choi, M. K Dawood, H. G Chew, D. A Antoniadis, E. A Fitzgerald and D. Z Chi

IEEE electron device letters, Vol.28(12), pp.1098-1101

01/12/2007

Abstract

Applied sciences

Electronics

Exact sciences and technology

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Transistors

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Title: The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2 /HfO2
Creators - without role: H. P YU - Singapore-MIT Alliance for Research and Technology
K. L Pey - Nanyang Technological University
W. K Choi - National University of Singapore
M. K Dawood - National University of Singapore
H. G Chew - Singapore-MIT Alliance for Research and Technology
D. A Antoniadis - Singapore-MIT Alliance for Research and Technology
E. A Fitzgerald - Singapore-MIT Alliance for Research and Technology
D. Z Chi - Institute of Materials Research and Engineering, Singapore 117602, Singapore
Publication Details: IEEE electron device letters, Vol.28(12), pp.1098-1101
Publisher: Institute of Electrical and Electronics Engineers
Number of pages: 4
Identifiers: 9914314809846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Journal article