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The interfacial reaction of Ni with (111)Ge, (100)Si 0.75Ge 0.25 and (100)Si at 400 °C
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The interfacial reaction of Ni with (111)Ge, (100)Si 0.75Ge 0.25 and (100)Si at 400 °C

L.J. Jin, K.L. Pey, W.K. Choi, E.A. Fitzgerald, D.A. Antoniadis, A.J. Pitera, M.L. Lee, D.Z. Chi and C.H. Tung
Thin solid films, Vol.462, pp.151-155
2004
DOI: https://doi.org/10.1016/j.tsf.2004.05.047

Abstract

In-situ annealing Ni germanide Ni germanosilicide Ni silicide
The reaction of Ni with Ge, Si 0.75Ge 0.25 and Si using rapid thermal annealing (RTA) and in-situ annealing method at 400 °C produces different phases, as revealed by cross-sectional transmission electron microscopy (TEM). A uniform film of nickel germanide (NiGe) was formed at 400 °C for the Ni reaction with Ge using the in-situ annealing technique, whereas Ni 3Ge 2 and NiGe phases were found using the RTA method. For the reaction between Ni and Si, a highly textured NiSi film was obtained at 400 °C for RTA whereas Ni 3Si 2 and NiSi were found using the in-situ annealing method. On the other hand, a relatively uniform NiSiGe was formed using RTA; Ni 3(Si 1− y Ge y ) 2 and Ni(Si 1− x Ge x ) ( x< y<0.25) were observed for the in-situ annealing. Different annealing time is identified as the mechanism responsible for the formation of the various phases.

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