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Thermal Analysis and Structural Design of Phase Change Random Access Memory
Journal article

Thermal Analysis and Structural Design of Phase Change Random Access Memory

Rong Zhao, Ler Lim, Luping Shi, Hock Lee, Hongxin Yang and Tow Chong
Chalcogenide Alloys for Reconfigurable Electronics (Materials Research Society Symposium Proceedings), Vol.918, pp.23-28
01/01/2006

Abstract

A thermal modeling based on Finite Element Method (FEM) was used to simulate Phase Change Random Access Memory (PCRAM) cells. The factors affecting temperature distribution of a PCRAM cell structure such as geometry, device structure and the properties of the individual materials were investigated. The results of the analysis provided the fundamental design of a novel cell structure which has a better performance and reliability.

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