Abstract
Transparent indium zinc oxide (IZO) ohmic contacts to phosphor-doped
n
-type ZnO have been formed. The resistance, transmittance, and phase reliability of the contacts were investigated. As deposited, an ohmic contact was formed with a specific contact resistance of about
1.1
×
10
−
4
Ω
cm
2
and the transmittance of the
Zn
O
∕
IZO
(
520
∕
350
nm
)
film was more than 75% in the
450
-
1100
nm
wavelength range. After annealing at
400
°
C
for
5
min
in a vacuum
(
2
×
10
−
5
mbar
)
, the specific contact resistance was reduced by about two orders of magnitude to
3.8
×
10
−
6
Ω
cm
2
, while maintaining the contact stability and high optical transparency.