Abstract
We show that the first derivative (dI(B)/dV) of the ballistic electron emission spectroscopy (BEES) current contains information on trap energy levels in graphene-oxide (GO). The devices were sandwiched in an Au/GO/modified-silicon (Au/GO/m-Si) stack. The extracted trap energy levels correlate well with the GO density of states measurements. Since trap states play an important role in charge transport through GO, our results provide relevant insights for graphene-related electronic engineering. (C) 2012 The Electrochemical Society. [DOI:10.1149/2.007205ssl]All rights reserved.