Abstract
We present an analytical two-dimensional (2D) model of a high current space charge limited (SCL) electron injection into a solid through a Schottky contact for a n+-i-n+ diode with constant mobility and no velocity overshoot effect. The amount of electron injection is limited by the barrier at the contact, which includes the effect of electron tunnelling through the Schottky barrier. For a given barrier height, the SCL current condition can be reached if the tunnelling current becomes dominant over the drift-diffusion current. An analytical scaling is present to show the enhancement of the SCL current due to finite contact size, which is verified by a 2D device simulator over a wide range of parameters.