Abstract
Ultra-low loss silicon nitride realized using deuterated precursors and low thermal budgets well within backend-of-line CMOS processing may accelerate widespread proliferation of their use.
- Title
- Ultra-low loss silicon nitride becomes even cooler
- Creators - without role
- Dawn T H Tan - Institute of Microelectronics, Agency for Science Technology and Research (ASTAR), Singapore, Singapore. dawn_tan@sutd.edu.sgXavier X Chia - Singapore University of Technology and Design
- Publication Details
- Light, science & applications, Vol.13(1), pp.233-3
- Grant note
- T2EP50121-0019 / Ministry of Education - Singapore (MOE) C220415015 / Agency for Science, Technology and Research (A*STAR) NRF-NRFI08-2022-0003 / National Research Foundation Singapore (National Research Foundation-Prime Minister's office, Republic of Singapore) NRF2022-QEP2-01-P08 / National Research Foundation Singapore (National Research Foundation-Prime Minister's office, Republic of Singapore) M21K2c0119 / Agency for Science, Technology and Research (A*STAR)
- Identifiers
- 9911489109846
- Academic Unit
- EPD Pillar
- Language
- English
- Resource Type
- Journal article