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Ultrafast progressive breakdown associated with metal-like filament formation of a breakdown path in a Hf O 2 ∕ Ta N ∕ Ti N transistor
Journal article   Peer reviewed

Ultrafast progressive breakdown associated with metal-like filament formation of a breakdown path in a Hf O 2 ∕ Ta N ∕ Ti N transistor

R. Ranjan, K. Pey, C. Tung, D. Ang, L. Tang, T. Kauerauf, R. Degraeve, G. Groeseneken, S. De Gendt and L. Bera
Applied physics letters, Vol.88(12), pp.122907-122907-3
22/03/2006
DOI: https://doi.org/10.1063/1.2186969

Abstract

Ultrafast progressive breakdown has been observed in a Ta N ∕ Ti N metal gate metal-oxide-semiconductor field effect transistor (MOSFET) compared to a polycrystalline silicon gate MOSFET. Physical analysis by transmission electron microscopy and electrical characterization shows that the ultrafast progressive breakdown is likely to be associated with a metal-like filament formation of the breakdown path. It has been observed that the metal-like filament of the breakdown path is detrimental to the metal gate MOSFET progressive breakdown lifetime.

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