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Understanding Asymmetric Transportation Behavior in Graphene Field-Effect Transistors Using Scanning Kelvin Probe Microscopy
Journal article   Peer reviewed

Understanding Asymmetric Transportation Behavior in Graphene Field-Effect Transistors Using Scanning Kelvin Probe Microscopy

W J Liu, H Y Yu, S H Xu, Q Zhang, X Zou, J L Wang, K L Pey, J Wei, H L Zhu and M F Li
IEEE electron device letters, Vol.32(2), pp.128-130
01/02/2011
DOI: https://doi.org/10.1109/LED.2010.2093500

Abstract

Asymmetric transport Charge carrier processes FETs field-effect transistors (FETs) graphene Junctions Logic gates Metals Microscopy scanning Kelvin probe microscopy (SKPM) Transportation
Scanning Kelvin probe microscopy (SKPM) is applied to experimentally understand the asymmetric behaviors in hole and electron transportation regions in graphene field-effect transistors (FETs). With gate modulation, the transition from p-p-p to p-n-p (for a Ag or Pd source/drain junction with graphene) or from n-p-n to n-n-n (for an Al source/drain junction with graphene) is verified by SKPM, which is believed to be responsible for the asymmetric transport. The odd resistance (R odd ) is positive for Ag (or Pd)/single-layer-graphene (SLG) FETs with ΔWF intrinsic >; 0, while R odd is negative for Al/SLG devices with ΔWF intrinsic <; 0, where ΔWF intrinsic is defined as the work function difference between metal and intrinsic graphene.

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