Uniform Void-Free Epitaxial CoSi[sub 2] Formation on STI Bounded Narrow Si(100) Lines by Template Layer Stress Reduction

Journal article

C. S. Ho, K. L. Pey, C. H. Tung, B. C. Zhang, K. C. Tee, G. Karunasiri and S. J. Chua

Electrochemical and solid-state letters, Vol.7(11), p.H49

2004

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Title: Uniform Void-Free Epitaxial CoSi[sub 2] Formation on STI Bounded Narrow Si(100) Lines by Template Layer Stress Reduction
Creators - without role: C. S. Ho - Singapore Institute of Manufacturing Technology
K. L. Pey - Nanyang Technological University
C. H. Tung - Singapore Science Park
B. C. Zhang - Singapore Institute of Manufacturing Technology
K. C. Tee - Singapore Institute of Manufacturing Technology
G. Karunasiri - National University of Singapore
S. J. Chua - National University of Singapore
Publication Details: Electrochemical and solid-state letters, Vol.7(11), p.H49
Identifiers: 9914316709846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Journal article