Abstract
Vacancy generation by laser preirradiation on silicon substrate before implantation for advanced junction engineering was demonstrated. Amorphized p(+)/n junction diodes subjected to preimplant laser irradiation show a twofold reduction on the OFF-state leakage current and a two-time improvement on the ON-state current compared to control devices without any preirradiation. The defect-removal mechanism is achieved by the recombination of excess vacancies trapped at the maximum laser melt depth as a result of the molten silicon recrystallization with the implantation-generated interstitials. The effectiveness of laser-generated vacancies in annihilating residual defects is evident in the suppression of junction leakage current.