Zinc-Blende Structure of CrTe Epilayers Grown on GaAs

M.G. Sreenivasan; K.L. Teo; M.B.A. Jalil; T. Liew; T.C. Chong; A.Y. Du

doi:10.1109/TMAG.2006.878851

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Journal article

Zinc-Blende Structure of CrTe Epilayers Grown on GaAs

M.G. Sreenivasan, K.L. Teo, M.B.A. Jalil, T. Liew, T.C. Chong and A.Y. Du

IEEE transactions on magnetics, Vol.42(10), pp.2691-2693

01/10/2006

DOI: https://doi.org/10.1109/TMAG.2006.878851

Abstract

Chromium

CrTe

Diffraction

Electrons

ferromagnetic

Gallium arsenide

Magnetization

Metastasis

molecular-beam epitaxy

Substrates

Tellurium

Temperature

Zinc compounds

zinc-blende

We report the synthesis of zinc-blende CrTe (zb-CrTe) as highly oriented crystalline grains in films of 100-nm thickness. The structural properties of the film were characterized using high-resolution transmission electron microscopy (HRTEM) and selective-area electron diffraction (SAED). Temperature-dependent magnetization measurements show that the Curie temperature of the film is ~327 K. Angular M-H measurements indicate that the CrTe films have an in-plane easy axis of magnetization along the [01macr1] direction of GaAs

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Title: Zinc-Blende Structure of CrTe Epilayers Grown on GaAs
Creators - without role: M.G. Sreenivasan - National University of Singapore
K.L. Teo - National University of Singapore
M.B.A. Jalil - National University of Singapore
T. Liew - National University of Singapore
T.C. Chong - Duke-NUS Medical School
A.Y. Du - Institute of Microelectronics
Publication Details: IEEE transactions on magnetics, Vol.42(10), pp.2691-2693
Publisher: IEEE
Number of pages: 3
Identifiers: 9911409209846
Academic Unit: Temasek Lab
Language: English
Resource Type: Journal article

Zinc-Blende Structure of CrTe Epilayers Grown on GaAs

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