Abstract
We have demonstrated the growth and control of the conductivity type (
n
or
p
) of ZnO doped with phosphorus (P). The success of
p
-type and
n
-type P-doped ZnO is confirmed by Hall effect measurements, Seebeck measurements, and the realization of
p
-
n
homojunctions. The room temperature carrier concentration, mobility, and resistivity of the as-deposited
p
-type P-doped ZnO are
2.8
×
10
17
cm
−
3
,
0.341
cm
2
∕
V
s
, and
65.4
Ω
cm
, respectively. The P-doped ZnO
p
-
n
homojunctions have a turn-on voltage of about
3.4
V
. Photoluminescence spectra show that the P-doped films may have a shallow accepter energy level.